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Wednesday, November 11, 2020 | History

6 edition of Hot-carrier effects in MOS devices found in the catalog.

Hot-carrier effects in MOS devices

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  • 6 Currently reading

Published by Academic Press in San Diego .
Written in English

    Subjects:
  • Metal oxide semiconductors.,
  • Hot carriers.

  • Edition Notes

    Includes bibliographical references (p. 187-301) and index.

    StatementEiji Takeda, Cary Y. Yang, Akemi Miura-Hamada.
    ContributionsYang, C. Y.-W. 1948-, Miura-Hamada, Akemi.
    Classifications
    LC ClassificationsTK7871.99.M44 T35 1995
    The Physical Object
    Paginationxii, 312 p. :
    Number of Pages312
    ID Numbers
    Open LibraryOL794889M
    ISBN 100126822409
    LC Control Number95030713

    Solid State Physics - Ebook written by Henry Ehrenreich, Frans Spaepen. Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read Solid State Physics.


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Hot-carrier effects in MOS devices by Eiji Takeda Download PDF EPUB FB2

The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field.

Hot-Carrier Effects in MOS Devices provides background information, clarifies important concepts, and presents the most recent findings in a readable form. Moreover, this book is not only indispensable for researches and graduate students, but also a highly useful reference for MOS device and process by: Hot-Carrier Effects in MOS Devices provides background information, clarifies important concepts, and presents the most recent findings in a readable form.

Moreover, this book is not only indispensable for researches and graduate students, but also a highly useful reference for MOS device and process engineers.5/5(1). Turning on Hot-carrier effects in MOS devices book device can have a very severe effect because it's current as a bipolar device.

Is a, essentially Hot-carrier effects in MOS devices book parallel with your drain source current. I will bypass the effects, this, these are not MOS effects but because they happen, due to the parasitic bipolar transistor I mentioned then.

The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the fieldBrand: Elsevier Science.

The exploding number of uses for ultra fast, ultra small integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. This work encompasses the research and discoveries made in the fast-paced area of hot carriers, and also includes the basics of MOS devices.

Get this from a library. Hot-Carrier Effects in MOS Devices. [Cary Y Yang; Akemi Miura-Hamada; Takeda, Eiji.] -- The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications.

They. This book ad­ dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi­ neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques.

VLSI ELECTRONICS: MICROSTRUCTURE SCIENCE. V O L 18 Chapter 3 Hot-Carrier Effects CHENMING HU D e p a r t m e n t of Electrical E n g i n e e r i n g a n d C o m p u t e r Sciences U n i v e r s i t y of C a l i f o r n i a Berkeley, California I.

III. Introduction C h a n n e l Electric Field Substrate Current M o d e l ^DSAT ar, and L Cited by: Hot-Carrier Effects in MOS Devices by Eiji Takeda, Cary Y. Yang, Akemi Miura-Hamada PDF, ePub eBook D0wnl0ad The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications.

Charge effects – ionic contamination (the electric field distortion by the accumulation of ionic contaminants) or hot carrier injection (the growth of defects in the gate oxide).

Electro-migration, contact and stress-induced migration, which are related to the metallization of the semiconductor devices and affect long-term reliability.

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications.

They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in by Nikkei Business Cited by:   The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of Brand: Elsevier Science.

Written by noted experts in the field, this book offers a revealing look at various aspects of the hot carrier effect and associated device degradations.

It provides a valuable reference on hot carrier related physics, experimental measurements, modeling, and practical demonstration on state-of-the-art devices. The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications.

They are rapidly movingout of the research lab and into the real book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in by Nikkei Business Cited by: carrier effects in mos devices librarydoc21 PDF may not make exciting reading, but hot carrier effects in mos devices librarydoc21 is packed with valuable instructions, information and warnings.

We also have many ebooks and user guide is. The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.

This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in by Nikkei Business. Hot-carrier effects in submicrometre MOS VLSI circuits are described in terms of (a) the hot-carrier injection mechanisms, (b) the device degradation, (c) the hot-carrier resistant device structures and (d) the hot-carrier phenomena under a bias of less than 3 V.

Two significant hot-carrier injection mechanisms are proposed which are different from those of the channel hot Cited by: This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in by Nikkei Business Publishers).

However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important by: Abstract: Degradation of MOS transistors subjected to hot carrier injection is discussed.

We find that the lifetime of both standard-and graded drain transistors is proportional to \exp[A/(DV_{ds})-B/ L_{eff}; where A,B and D are constants.A and B are the same for both transistor types while D=1 for standard and D= for graded drain transistors.

Ebook > Sciences > Engineering / Technics > Electronics, Electrical Engineering, Communications Engineering > Akemi Miura-Hamada & Eiji Takeda: Hot-Carrier Effects in MOS Devices (PDF) Akemi Miura-Hamada & Eiji Takeda Hot-Carrier Effects in MOS Devices.

As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether.

On the other hand. Takeda, C. Yang and A. Miura-Hamada, “Hot- Carrier Effects in MOS Devices,” Academic Press, San Diego, has been cited by the following article: TITLE: Switchable PLL Frequency Synthesizer andHot Carrier Effects.

AUTHORS: Yang Liu, Ashok Srivastava, Yao Xu. Hot-carrier effects in MOS devices. By Eiji Takeda, They are rapidly movingout of the research lab and into the real book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in by Nikkei Business Publishers).

However, the new book is much more than a translation. Keywords: hot carrier, submicron device, MOSFET, reliability, trap, interface states, lucky electron, electron temperature JOURNALS FREE ACCESS Volume 59 Issue 3. Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state.

The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Entdecken Sie "Hot-Carrier Effects in MOS Devices" von Eiji Takeda und finden Sie Ihren Buchhändler. The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications.

They are rapidly movingout of the research lab and into the real world. This book. The so-called “Energy Driven Model” for hot carrier effects in MOS devices was first proposed in as a replacement for the ubiquitous Lucky Electron.

The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits.

Reviews the history of radiation-hard technology, providing background information for 5/5(1). Gate Leakage Up: 2. ULSI MOS Device Previous: Drain-Induced Barrier Lowering. Hot Carrier Effects If a MOS transistor is operated under pinch-off condition, also known as ``saturated case'', hot carriers traveling with saturation velocity can cause parasitic effects at the drain side of the channel known as ``Hot Carrier Effects'' (HCE).

Evaluating Hot Carrier Induced Degradation of MOSFET Devices Application Note Series Introduction With decreased MOSFET gate length, hot carrier induced degradation has become one of the most important reliability concerns. In the hot carrier effect, carriers are accelerated by the channel electric fields and become trapped in the oxide.

TheseFile Size: 63KB. Hot Carriers. The term 'hot carriers' refers to either holes or electrons (also referred to as 'hot electrons') that have gained very high kinetic energy after being accelerated by a strong electric field in areas of high field intensities within a semiconductor (especially MOS) e of their high kinetic energy, hot carriers can get injected and trapped in areas of the device where.

STUDY OF OXIDE BREAKDOWN, HOT CARRIER AND NBTI EFFECTS ON MOS DEVICE AND CIRCUIT RELIABILITY by YI LIU B.S. University of Electronic Science & Technology of China M.S. University of Electronic Science & Technology of China A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of PhilosophyCited by: 4.

This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques.

Study of hot-carrier effects on power RF LDMOS device reliability. RF N-LDMOS devices due to hot carrier effects. degradation of hot-carrier stressed n. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation.

It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the.

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.

Coverage includes an explanation of carrier transport within devices and book-keeping of. Download hot carrier effects in mos devices or read online here in PDF or EPUB. Please click button to get hot carrier effects in mos devices book now.

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Hot Carrier. Read Hot-Carrier Effects in MOS Devices by Eiji Takeda, Cary Y. Yang, Akemi Miura-Hamada for free with a 30 day free trial. Read unlimited* books and audiobooks on the web, iPad, iPhone and Android.

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as. Example of a hot-carrier susceptibility contour.

Red indicate dangerous, yellow hot, and orange cool operating conditions for the devices indicated by the coded values. 69 Hot-carrier susceptibility contours for a differential pair spanning spanning VCM (a) and Ibia, (b).

@article{osti_, title = {Radiation effects in LDD MOS devices}, author = {Woodruff, R L and Adams, J R}, abstractNote = {The purpose of this work is to investigate the response of lightly doped drain (LDD) n-channel transistors to ionizing radiation.

Transistors were fabricated with conventional (non-LDD) and lightly doped drain (LDD) structures using both standard (non .Book Chapters.

C. Hu, “Hot C. Hu, “Effect of Oxide Field on Hot-Carrier-Induced Metal-Oxide-Semiconductor Field-Effect Transistor Degradation,” Applied Physics Letters, Vol. 50, No. 17, Apr. 27 “Hot Electron Effects – Closing the Gap Between Devices and Circuits,” International Conference on Advanced Microelectronic Devices.Description.

For undergraduate-level courses in Electronic Devices. THE most widely used introduction to solid state electronic devices text, this book is designed to help students gain a basic understanding of semiconductor devices and the physical operating principles behind them.

This two-fold approach 1) provides students with a sound understanding of existing devices.